Focused Ion Beam H-Bar Technique

Back in school, I learned how to use a Focused Ion Beam (FIB) workstation (taught by Bill Carmichael at MATC Madison). This interesting technology uses a Gallium source to create a beam capable of milling away at very small objects. This machine is used by technology companies such as Intel to aid in the creation of everything from computer chips and data storage devices to LCD displays and C-MOS digital camera detectors.

One technique commonly used by the industry for looking at and editing errors that occurred in the lithography is called the H-Bar technique. The H-bar technique produces an electron transparent cross-section (image top right click to enlarge) of an integrated circuit.
The microchip is polished to an approximate thickness of 20um and mounted to a grid (a 3mm circular piece of metal that can support a sample and is be placed into a Transmission Electron Microscope for examination (image left click to enlarge)). After putting the sample into the FIB, a small Tungsten strip is deposited to protect the circuits and then the sides of the microchip are milled away with the Gallium Ion beam. This results in an H-shaped cross-section of circuits, hence the name, "H-Bar." The sample can then be put into a TEM and the circuits imaged.
The above image was taken on a Hitachi H-800 TEM. The image below (click to enlarge) was taken with an FEI 610 Focused Ion Beam Workstation. Illustrations were made with AppleWorks 6.